Structural properties of pulsed laser deposited SnOx thin films

▶ Nanocrystalline SnOx thin films were deposited by pulsed laser ablation at 470 K. ▶ Almost stoichiometric films were grown in the presence of 13.3 Pa of oxygen. ▶ Increasing the deposition oxygen pressure up to 66.7 Pa a worsening of the structural properties was observed. ▶ SAED analysis shows that the unit cell shrinks along the principal crystallographic axes due to oxygen vacancies, according to the stoichimetric parameter values.