کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5359353 | 1503677 | 2013 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Theoretical study on optoelectronic properties of Ga0.75Al0.25N (0Â 0Â 1) reconstruction surfaces
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موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Theoretical study on optoelectronic properties of Ga0.75Al0.25N (0Â 0Â 1) reconstruction surfaces Theoretical study on optoelectronic properties of Ga0.75Al0.25N (0Â 0Â 1) reconstruction surfaces](/preview/png/5359353.png)
چکیده انگلیسی
To research the electronic structure and optical properties of Ga0.75Al0.25N (0Â 0Â 1) (2Â ÃÂ 2) and c(2Â ÃÂ 2) reconstruction surfaces, two reconstruction surface models are built. The band structure, density of states, work function, surface energy, and optical properties of the two reconstruction surfaces are calculated based on first principles. Results show that c(2Â ÃÂ 2) reconstruction surface is more stable than (2Â ÃÂ 2) reconstruction surface. The work functions of the two reconstruction surfaces are 3.084Â eV and 3.431Â eV, respectively. The band gaps of the surfaces become small compared with the bulk, which show the surfaces own metal property. The absorption coefficients of the surfaces are smaller than that of the bulk.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 287, 15 December 2013, Pages 1-7
Journal: Applied Surface Science - Volume 287, 15 December 2013, Pages 1-7
نویسندگان
Mingzhu Yang, Benkang Chang, Jing Guo, Guanghui Hao, Feng Shi, Honggang Wang, Meishan Wang,