کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5359703 | 1503681 | 2013 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Study of Cs adsorption on Ga(Mg)0.75Al0.25N (0Â 0Â 0Â 1) surface: A first principle calculation
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Study of Cs adsorption on Ga(Mg)0.75Al0.25N (0Â 0Â 0Â 1) surface: A first principle calculation Study of Cs adsorption on Ga(Mg)0.75Al0.25N (0Â 0Â 0Â 1) surface: A first principle calculation](/preview/png/5359703.png)
چکیده انگلیسی
In order to study the activation process of Ga1âxAlxN photocathodes theoretically, models of Cs adsorption on Ga(Mg)0.75Al0.25N (0Â 0Â 0Â 1) surface are built, then the atomic structure, electronic structure, adsorption energy, work function, dipole moment and optical properties of the models are calculated. All calculations are carried out using Cambridge Serial Total Energy Package (CASTEP) based on first principle. Results show that Cs adsorption on Mg doping Ga1âxAlxN (0Â 0Â 0Â 1) surface can reduce work function of the surface, and the favorite adsorption site is on the top of p-type impurity. Cs adsorption on p-type Ga1âxAlxN (0Â 0Â 0Â 1) surface can produce the structure of p-type bulk with n-type surface, which is helpful to surface band bend downward and decrease electron affinity seriously. The absorption coefficient of Cs adsorption system is less than that of the clean surface. Theoretical study of Cs adsorption on Ga1âxAlxN (0Â 0Â 0Â 1) surface can help to improve activation technology of Ga1âxAlxN photocathodes.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 282, 1 October 2013, Pages 308-314
Journal: Applied Surface Science - Volume 282, 1 October 2013, Pages 308-314
نویسندگان
Mingzhu Yang, Benkang Chang, Guanghui Hao, Jing Guo, Honggang Wang, Meishan Wang,