کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5359779 | 1503705 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Erbium containing ZnO prepared by ion beam sputtering deposition and thermal annealing mixing
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
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چکیده انگلیسی
Erbium containing ZnO was prepared by ion beam sputtering deposition and thermal annealing. Alternate ZnO and erbium layers were deposited on silicon substrates at room temperature. Annealed sample shows mixing of erbium and ZnO layers, while strong 980Â nm emission was observed under the excitation of a 325Â nm laser which is due to the inner 4f transition of Er3+ from 4I11/2 to 4I15/2. Under the optimized annealing condition, more than 80% of oxygen atoms are still located in stoichiometric ZnO matrixes. X-ray diffraction analysis shows a shift of ZnO (0Â 0Â 2) diffraction peak position to the larger angle value, indicating an elongated c-axis and suggesting the incorporation of erbium ions into ZnO. Variable temperature photoluminescence analysis indicates that the emission at 980Â nm is due to energy transfer from defect-related deep level emission of host ZnO to erbium ions.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 255, Issues 13â14, 15 April 2009, Pages 6525-6528
Journal: Applied Surface Science - Volume 255, Issues 13â14, 15 April 2009, Pages 6525-6528
نویسندگان
Liang-Chiun Chao, Chung-Wen Chang, Dong-Yi Tsai,