کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5359812 | 1503705 | 2009 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
InGaN nanorod arrays grown by molecular beam epitaxy: Growth mechanism structural and optical properties
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موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
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چکیده انگلیسی
Vertically c-axis-aligned InGaN nanorod arrays were synthesized on c-plane sapphire substrates by radio-frequency molecular beam epitaxy. In situ reflection high-energy electron diffraction was used to monitor the growth process. X-ray diffraction, transmission electron microscopy, field-emission scanning electron microscope, and photoluminescence were used to investigate the structural and optical properties of the nanorods. The growth mechanism was studied and a growth model was proposed based on the experimental data. A red shift of photoluminescence spectrum of InGaN nanorods with increasing growth time was found and attributed to the partial release of stress in the InGaN nanorods.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 255, Issues 13â14, 15 April 2009, Pages 6705-6709
Journal: Applied Surface Science - Volume 255, Issues 13â14, 15 April 2009, Pages 6705-6709
نویسندگان
K.M. Wu, Y. Pan, C. Liu,