کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5359833 | 1388253 | 2010 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Anisotropic characteristics of a-plane GaN films grown on γ-LiAlO2 (3 0 2) substrates by MOCVD
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Anisotropic characteristics of a-plane GaN films grown on γ-LiAlO2 (3 0 2) substrates by MOCVD Anisotropic characteristics of a-plane GaN films grown on γ-LiAlO2 (3 0 2) substrates by MOCVD](/preview/png/5359833.png)
چکیده انگلیسی
Single crystalline wurtzite a-plane GaN films were deposited on (3 0 2) LiAlO2 (LAO) substrates by metal organic chemical vapor deposition (MOCVD). The high resolution X-ray diffraction (HRXRD) results and selected area electron diffraction (SAED) patterns in cross section indicated that the crystallographic orientation between LAO and wurtzite GaN was: [3 0 2]LAO parallel to [112¯0]GaN, [2¯03]LAO parallel to [11¯00]GaN and [0 1 0]LAO parallel to [0 0 0 1]GaN, the mismatches were â4.43%, â2.86% and â0.31%, respectively. When the incident beam parallel (or perpendicular) to the [0 0 0 1] direction of GaN, the FWHM values of Ï-scans reached the minimum (or maximum). The a-GaN film was found to have steps along [101¯0] direction and strips coalesced parallel to [0 0 0 1] direction. The PL intensity of the emission peak around 364 nm reduced a lot when the polarization changed from Eâ¥c to E||c.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 257, Issue 4, 1 December 2010, Pages 1181-1184
Journal: Applied Surface Science - Volume 257, Issue 4, 1 December 2010, Pages 1181-1184
نویسندگان
Tingting Jia, Shengming Zhou, Hao Teng, Hui Lin, Jun Wang, Jianqi Liu, Yongxin Qiu, Jun Huang, Kai Huang, Feng Bao, Ke Xu,