Solid phase growth of NiSi in polycrystalline Si on SiO2 with Cl plasma containing NiCl

► Ni silicidation in poly Si is possible by a NiCl plasma treatment. ► The Ni and Si depth profile is uniform in the Ni silicide film. ► The Ni silicide growth depends on the plasma power and the substrate temperature. ► We discuss the growth mechanism of Ni silicide through the NiCl plasma treatment.