کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5360742 | 1388265 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Theoretical investigations on the formation of wurtzite segments in group III-V semiconductor nanowires
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
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چکیده انگلیسی
Structural trends in group III-V semiconductor nanowires (NWs) are systematically investigated based on Monte-Carlo simulations using our empirical potential calculations. The calculated NW stacking sequences for the selective area growth demonstrate that the averaged periodicity between wurtzite segments, which is independent of the NW size, decreases with increasing ionicity of semiconductors fi. It is also found that the periodicity is affected by the nucleus size of NWs: The calculated periodicity in InP (InAs) NWs with the nucleus size consisting of â¼ 10 atoms are 0.76 (0.86) nm, reasonably consistent with the experimentally reported one. On the other hand, the nucleus size to reproduce the experimentally reported periodicity in GaAs NWs is estimated to be more than 70 atoms. These results thus imply that the nucleus size as well as fi is of importance in determining the averaged periodicity between wurtzite segments.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 254, Issue 23, 30 September 2008, Pages 7668-7671
Journal: Applied Surface Science - Volume 254, Issue 23, 30 September 2008, Pages 7668-7671
نویسندگان
Tomoki Yamashita, Kosuke Sano, Toru Akiyama, Kohji Nakamura, Tomonori Ito,