Structural investigation of nC-Si/SiOx:H thin films from He diluted (SiH4Â +Â CO2) plasma at low temperature

► nC-Si/SiOx:H thin films prepared at low temperature He diluted (SiH4 + CO2) plasma. ► Three layers growth structure identified by FESEM and modeling on ellipsometry data. ► Control of nanocrystallization with simultaneous oxygenation at optimum plasma pressure.