A new laser direct etching method of indium tin oxide electrode for application to alternative current plasma display panel

For cost effective fabrication and time of alternative current plasma display panels (AC PDPs), an indium tin oxide (ITO) layer was patterned directly with a Q-switched diode pumped Nd:YVO4 laser (λ = 1064 nm). As experimental results, 500 mm/s scan speed with 40 kHz repetition rate was suitable for the application to AC PDP ITO electrode. In comparison with the chemically wet-etched ITO patterns by photolithography method, laser-ablated ITO patterns showed the formation of shoulders at the edge of the ITO lines and a ripple-like structure of the etched bottom. By dipping the laser-ablated ITO films in the chemical etching solution for 30 s at 50 °C, the shoulders were effectively removed without affecting the discharging properties of AC PDP.