Relatively low temperature synthesis of graphene by radio frequency plasma enhanced chemical vapor deposition

► We have successfully synthesized high-quality, large-area graphene using RF-PECVD technique at substrate temperature as relatively low as 650 °C on SiO2/Si substrate covered with Ni thin film. ► During deposition, the trace amount of carbon (CH4 gas flow rate of 2 sccm) is introduced into PECVD chamber and the deposition time is only 30 s, in which the carbon atoms diffuse into the Ni film and then segregate on its surface, forming single-layer or few-layer graphene. ► This investigation demonstrates that RF-PECVD technique is simple, low-cost, high-effective and reproducible for synthesizing graphene at relatively low temperature, compared to other CVD techniques.