کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5361968 | 1388279 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
GaN-based light-emitting diode with ZnO nanotexture layer prepared using hydrogen gas
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
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چکیده انگلیسی
ZnO films were deposited on indium tin oxide (ITO), which formed the transparent conductive layer (TCL) of a GaN-based light-emitting diode (LED), by ultrasonic spraying pyrolysis to increase the light output power. The ZnO nanotexture was formed by treating the as-deposited ZnO films with hydrogen. The root mean square (RMS) roughness increased from 4.47 to 7.89Â nm before hydrogen treatment to 10.82-15.81Â nm after hydrogen treatment for 20Â min. Typical current-voltage (I-V) characteristics of the GaN-based LEDs with a ZnO nanotexture layer have a forward-bias voltage of 3.25Â V at an injection current of 20Â mA. The light output power of a GaN-based LED with a ZnO nanotexture layer improved to as much as about 27.5% at a forward current of 20Â mA.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 254, Issue 20, 15 August 2008, Pages 6586-6589
Journal: Applied Surface Science - Volume 254, Issue 20, 15 August 2008, Pages 6586-6589
نویسندگان
Lung-Chien Chen, Cheng-Ban Chung,