کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5361999 | 1388280 | 2009 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Microstructure and electrical properties of Ba0.5Sr0.5TiO3 thin films prepared on copper foils with La2O3 buffer layers
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
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چکیده انگلیسی
Ba0.5Sr0.5TiO3 (BST) thin films were deposited on copper foils via sol-gel method with La2O3 as a buffer layer. The films were processed in almost inert atmosphere so that the substrate oxidation was avoided while allowing the perovskite film phase to crystallize. The existence of a La2O3 buffer layer between the BST thin film and Cu foil improved the dielectric constant and reduced the leakage current density of the BST thin film. Meanwhile, the BST thin film exhibited ferroelectric character at room temperature, which was contrast to the para-electric behavior of the film without the buffer layer. Effects of La2O3 buffer layer on the crystallizability and microstructure of BST thin films were also investigated.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 255, Issue 20, 30 July 2009, Pages 8319-8323
Journal: Applied Surface Science - Volume 255, Issue 20, 30 July 2009, Pages 8319-8323
نویسندگان
Yanhua Fan, Shuhui Yu, Rong Sun, Lei Li, Ruxu Du, Yansheng Yin,