کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5362038 1388280 2009 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Effect of annealing on electrical resistivity of rf-magnetron sputtered nanostructured SnO2 thin films
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Effect of annealing on electrical resistivity of rf-magnetron sputtered nanostructured SnO2 thin films
چکیده انگلیسی

Tin oxide (SnO2) thin films were deposited by radio frequency (RF) magnetron sputtering on clean corning glass substrates. These films were then annealed for 15 min at various temperatures in the range of 100-500°C. The films were investigated by studying their structural and electrical properties. X-ray diffraction (XRD) results suggested that the deposited SnO2 films were formed by nanoparticles with average particle size in the range of 23-28 nm. XRD patterns of annealed films showed the formation of small amount of SnO phase in the matrix of SnO2. The initial surface RMS roughness measured with atomic force microscopy (AFM) was 25.76 nm which reduces to 17.72 nm with annealing. Electrical resistivity was measured as a function of annealing temperature and found to lie between 1.25 and 1.38 mΩ cm. RMS roughness and resistivity show almost opposite trend with annealing.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 255, Issue 20, 30 July 2009, Pages 8562-8565
نویسندگان
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