کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5362370 | 1388284 | 2008 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Simulation of the transport of sputtered atoms and effects of processing conditions
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
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چکیده انگلیسی
Sputter deposition is a complex process; it is obvious that the energy and direction of the particles arriving at the substrate is in close relation with the transport process from the target to the substrate, it is desirable to model this transport of atoms through the background gas. The transport of sputtered Ag atoms during sputter deposition through the gas phase in the facing targets sputtering system studied by Monte Carlo simulation is presented. The model calculates the flux of the atoms arriving at the substrate, their energy, direction and number of collisions they underwent. The dependence of the deposition rates of Ag atoms on the gas pressure and the distance between the targets and substrate were investigated.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 254, Issue 18, 15 July 2008, Pages 5750-5756
Journal: Applied Surface Science - Volume 254, Issue 18, 15 July 2008, Pages 5750-5756
نویسندگان
A. Settaouti, L. Settaouti,