کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5362392 | 1388284 | 2008 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of Ti doping on Ta2O5 stacks with Ru and Al gates
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موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Effect of Ti doping on Ta2O5 stacks with Ru and Al gates Effect of Ti doping on Ta2O5 stacks with Ru and Al gates](/preview/png/5362392.png)
چکیده انگلیسی
The Ti-doped Ta2O5 thin films (<10Â nm) obtained by rf sputtering are studied with respect to their composition, dielectric and electrical properties. The incorporation of Ti is performed by two methods - a surface doping, where a thin Ti layer is deposited on the top of Ta2O5 and a bulk doping where the Ti layer is sandwiched between two layers of Ta2O5. The effect of the process parameters (the method and level of doping) on the elemental distribution in-depth of the films is investigated by the time of flight secondary ion mass spectroscopy (ToF-SIMS). The Ti and Ta2O5 are intermixed throughout the whole thickness but the layers are very inhomogeneous. Two sub-layers exist in all the samples - a near interfacial region which is a mixture of Ta-, Ti-, Si-oxides as well as TaSiO, and an upper Ti-doped Ta2O5 sub-layer. For both methods of doping, Ti tends to pile-up at the Si interface. The electrical characterisation is performed on capacitors with Al- and Ru-gate electrodes. The two types of MIS structures exhibit distinctly different electrical behavior: the Ru gate provides higher dielectric permittivity while the stacks with Al electrode are better in terms of leakage currents. The specific metal-dielectric reactions and metal-induced electrically active defects for each metal electrode/high-k dielectric stack define its particular electrical behavior. It is demonstrated that the Ti doping of Ta2O5 is a way of remarkable improvement of leakage characteristics (the current reduction with more than four orders of magnitude as compared with undoped Ta2O5) of Ru-gated capacitors which originates from Ti induced suppression of the oxygen vacancy related defects.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 254, Issue 18, 15 July 2008, Pages 5879-5885
Journal: Applied Surface Science - Volume 254, Issue 18, 15 July 2008, Pages 5879-5885
نویسندگان
A. Paskaleva, M. Tapajna, E. Atanassova, K. Frohlich, A. Vincze, E. DobroÄka,