کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5362502 | 1388288 | 2008 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Nitric acid oxidation method to form SiO2/3C-SiC structure at 120 °C
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
3C-SiC(0 0 1) surfaces are considerably rough with the roughness root mean square value (Rms) of 1.3 nm, but the surfaces become considerably smooth (i.e., Rms of 0.5 nm) by heat treatment in pure hydrogen at 400 °C. Two-step nitric acid (HNO3) oxidation (i.e., immersion in â¼40 wt% HNO3 followed by that in 68 wt% HNO3) performed after the hydrogen treatment can oxidize 3C-SiC at extremely low temperature of â¼120 °C, forming thick SiO2 (e.g., 21 nm) layers. With no hydrogen treatment, the leakage current density of the ãAl/SiO2/3C-SiCã metal-oxide-semiconductor (MOS) diodes is high, while that for the MOS diodes with the hydrogen treatment is considerably low (e.g., â¼10â6 A/cm2 at the forward gate bias of 1 V) due to the formation of uniform thickness SiO2 layers. The MOS diodes with the hydrogen treatment show capacitance-voltage curves with accumulation, depletion, and deep-depletion characteristics.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 254, Issue 12, 15 April 2008, Pages 3667-3671
Journal: Applied Surface Science - Volume 254, Issue 12, 15 April 2008, Pages 3667-3671
نویسندگان
Sung-Soon Im, Sumio Terakawa, Hitoo Iwasa, Hikaru Kobayashi,