Keywords: اکسید دروازه; Gate oxide; Lanthanide rare earth oxides; Samarium oxide (Sm2O3); Deposition methods; CVD; PVD;
مقالات ISI اکسید دروازه (ترجمه نشده)
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Keywords: اکسید دروازه; Organic light emitting transistor; Alumina; Thin film; Organic light emitting devices; Atomic layer deposition; Dielectrics; Gate oxide;
Keywords: اکسید دروازه; Carbon nanotube; Transistor; Gate oxide; MOSFET
Effects of post-deposition annealing on sputtered SiO2/4H-SiC metal-oxide-semiconductor
Keywords: اکسید دروازه; Silicon carbide; MOS capacitor; Gate oxide; Sputtering; Post-deposition annealing;
Subtle gate oxide defect elimination to improve the reliability of a 32M-bit SRAM product
Keywords: اکسید دروازه; Defect; Gate oxide; HTOL; Reliability; Testing; SRAM
Reliability of Diode-Integrated SiC Power MOSFET(DioMOS)
Keywords: اکسید دروازه; Silicon carbide (SiC); Diode-integrated MOS (DioMOS); Threshold voltage; Gate oxide; Channel diode; HTGB; HTRB;
Ge incorporated epitaxy of (110) rutile TiO2 on (100) Ge single crystal at low temperature by pulsed laser deposition
Keywords: اکسید دروازه; Rutile TiO2; Gate oxide; Germanium; Pulsed laser deposition
High-K materials and metal gates for CMOS applications
Keywords: اکسید دروازه; ALD; atomic layer deposition; CB; conduction band; CBO; conduction band offset; CMOS; complimentary metal oxide semiconductor; CNL; charge neutrality level; CV; capacitance voltage; CVD; chemical vapour deposition; DB; dangling bond; DOS; density of state
Atomic layer deposition of Y2O3 and yttrium-doped HfO2 using a newly synthesized Y(iPrCp)2(N-iPr-amd) precursor for a high permittivity gate dielectric
Keywords: اکسید دروازه; High-k; Rare earth; HfO2; Y2O3; Dielectric constant; Yttrium; Leakage current; Gate oxide; ALD; Atomic layer deposition; Precursor;
Experimental characterization of low-frequency noise in power MOSFETs for defectiveness modelling and technology assessment
Keywords: اکسید دروازه; LF noise; 1/f Noise; Flicker noise; Power MOSFET; U-MOSFET; Trench-gate power MOSFET; Drain current noise; Low-frequency noise measurement; Gate oxide; Defectiveness
Comparison of SiO2-based double passivation scheme by e-beam evaporation and PECVD for surface passivation and gate oxide in AlGaN/GaN HEMTs
Keywords: اکسید دروازه; High electron mobility transistor (HEMT); Electron beam (e-beam) evaporation; Plasma-enhanced chemical vapor deposition (PECVD); Surface passivation; Gate oxide;
Optical diagnostics of plasma chemistries and chamber conditions in gate oxide stack etch
Keywords: اکسید دروازه; Polysilicon gate stack etch; Gate oxide; Optical emission
Electron shading damage enhancement due to nonuniform in-hole etch rate in deep contact-hole process
Keywords: اکسید دروازه; Plasma damage; FN tunneling; In-hole etch rate uniformity; Gate oxide
Nitric acid oxidation of Si (NAOS) method for low temperature fabrication of SiO2/Si and SiO2/SiC structures
Keywords: اکسید دروازه; 81.6.Cp; 73.40.Qv; 73.61.Ng; 85.40.Hp; Nitric acid oxidation; Low temperature oxidation; Si; Ultrathin oxide; Metal-oxide-semiconductor (MOS); Gate oxide;
Interface roughness effect between gate oxide and metal gate on dielectric property
Keywords: اکسید دروازه; Interface roughness; Gate oxide; Metal gate; HfO2; Ru
Evaluation of Y2O3 gate insulators for a-IGZO thin film transistors
Keywords: اکسید دروازه; Gate oxide; TTFT (transparent thin film transistor); Leakage current; Y2O3; a-IGZO
Annealing effect on physical and electrical characteristics of thin HfO2, HfSixOy and HfOyNz films on Si
Keywords: اکسید دروازه; HfO2; Gate oxide; High-k; Annealing; Leakage current; Bandgap
Atomic layer deposition of an HfO2 thin film using Hf(O-iPr)4
Keywords: اکسید دروازه; Hafnium oxide; Atomic layer deposition; Hafnium tetrakis-iso-propoxide; Dielectric; Gate oxide
Effect of hydration on the properties of lanthanum oxide and lanthanum aluminate thin films
Keywords: اکسید دروازه; C. Dielectric properties; Hydration; High-k material; Gate oxide
The surface charge effect by using boron ions implantation in p-channel MOSFETs fabricated
Keywords: اکسید دروازه; 61.72.Ff; 81.15.Hi; 51.50.+vIon implantation; Surface charge; Breakdown voltage; Gate oxide
Nitric acid oxidation method to form SiO2/3C-SiC structure at 120 °C
Keywords: اکسید دروازه; 81.40.Cp; 73.61.Ng; 85.40.Hp; 73.40.Qv; SiC; MOS; Nitric acid oxidation; Hydrogen treatment; Low temperature oxidation; Silicon oxide; Gate oxide;
Nitric acid method for fabrication of gate oxides in TFT
Keywords: اکسید دروازه; 81.40.Cp; 73.61.Ng; 85.40.Hp; 73.40.Qv; MOS; Nitric acid oxidation; Silicon oxide; Silicon; Thin film transistor; Low temperature oxidation; Gate oxide;
Electronic defects in LaAlO3
Keywords: اکسید دروازه; Gate oxide; Defects; Trapping; Calculation
SrTiO3–SiO2 oxide films for possible high-k gate dielectric applications
Keywords: اکسید دروازه; High-k; Gate oxide; Leakage current; Dielectric constant
Reliability study of ultra-thin gate oxides on strained-Si/SiGe MOS structures
Keywords: اکسید دروازه; Strained Si; SiGe; Reliability; Gate oxide; Constant voltage stress
Electrical properties of phthalocyanine based field effect transistors prepared on various gate oxides
Keywords: اکسید دروازه; Field effect transistor; Gate oxide; Copper phthalocyanine; Tantalum oxide; Interfacial capacitance
A thorough study of hydrogen-related gate oxide degradation in deep submicron MOSFET’s with deuterium treatment process
Keywords: اکسید دروازه; Deuterium; Gate oxide; Oxide-trap precursor; Hydrogen
A comparative analysis of thermal gate oxide on strained Si/relaxed SiGe layer for reliability prediction of strained Si MOSFETs
Keywords: اکسید دروازه; 73.40.Qv; 77.84.Bw; 85.40.âe; Strained Si; SiGe; Gate oxide; Reliability; Mobility; MOSFET;
Quantitative analysis of gate-oxide interface roughening in SiGe/Si virtual substrate-based transistor device structures
Keywords: اکسید دروازه; SiGe; MOSFET; Gate oxide; Roughness; Silicon germanium;