Effect of parametric variation on the performance of single wall carbon nanotube based field effect transistor

• The effects of dielectric constant and gate insulator thickness on the performance of SWCNT-FETs were studied.
• SWCNT-FET has a considerable advantage over conventional MOSFETs.
• As the ION increases on scaling down the gate oxide thickness, the level of IOFF is not affected.
• The thickness of thin oxide layer causes drastic increase in gate leakage current.
• Thinner gate oxide and high-k dielectric material have improved the performance of CNT-FETs.

The effects of dielectric constant and gate insulator thickness on the performance of single wall carbon nanotube field effect transistors (CNTFETs) have been analyzed using a mathematical model based on FETToy simulator. Both the parameters are found to have significant effect on the device performance, particularly the on-current; while the on-current (ION) increases on scaling down the gate oxide thickness, the level of leakage current (IOFF) is not considerably affected. This is an advantage of CNTFET over conventional MOSFETs where the thickness of thin oxide layer causes drastic increase in gate leakage current. Our analysis results show that thinner gate oxide and larger CNT improve the performance of CNTFETs. Therefore, the performance of our simulated CNTFETs using this model has clear lead over those of conventional MOSFETs.

The effects of dielectric constant and gate insulator thickness on the performance of CNT-FETs have been analyzed using a mathematical model based on FETToy simulator and results showed that thinner gate oxide and larger CNT improved the performance of CNT-FETs. Therefore, the performance of the simulated CNFETs using this model has clear lead over those of conventional MOSFETs. The geometry of the FETToy model is shown in figure.Figure optionsDownload as PowerPoint slide