کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5362840 | 1388293 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Activation energies of the acceptor-bound excitons and the donor-acceptor pairs in nitrogen-doped p-type ZnSe, p-type ZnSySe1ây, and p-type Zn1âxMgxSySe1ây epitaxial films grown on GaAs (1Â 0Â 0) substrates
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موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
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چکیده انگلیسی
Nitrogen-doped p-type ZnSe, p-type ZnSySe1ây, and p-type Zn1âxMgxSySe1ây epilayers were grown on n-type GaAs (1Â 0Â 0) substrates by molecular beam epitaxy. Photoluminescence (PL) spectra for the p-type ZnSe and the lattice-matched p-type ZnS0.06Se0.94, and p-type Zn0.92Mg0.08S0.12Se0.88 epilayers showed a deep acceptor bound exciton emission and a donor-acceptor pair emission. Temperature-dependent PL measurements were carried out to determine the activation energies of these states. The activation energies of the acceptor-bound excitons and the donor-acceptor pairs were determined to be 40 and 65 meV in the p-type ZnSe epilayer, 20 and 45 meV in the p-type ZnS0.06Se0.94, and 45 and 43 meV in the p-type Zn0.92Mg0.08S0.12Se0.88 epilayers.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 255, Issue 9, 15 February 2009, Pages 5048-5051
Journal: Applied Surface Science - Volume 255, Issue 9, 15 February 2009, Pages 5048-5051
نویسندگان
H.J. Kim, B.J. Kim, T.W. Kim, K.H. Yoo,