Studies on the structural and electrical properties of F-doped SnO2 film prepared by APCVD

► SnO was present in SnO2 film. ► Large polyhedron-like grains were distributed over small round grains. ► When heated for 262 s, the oxygen content in the surface increased to 83.38%. ► After heated, The resistivity increased, carrier concentration decreased. ► μ is limited by ionized impurity scattering rather than grain boundary scattering.