Ion beam sputter deposited W/Si multilayers: Influence of re-sputtering on the interface structure and structure modification at ultra short periods

► W/Si multilayers of periods ranging from 1.7 nm to 9.6 nm have been examined for changes in structure with period thickness. ► Loss of Si due to re-sputtering during W deposition has been estimated. ► Minimum thickness of continuous W layer has been estimated. ► Minimum period thickness possible to deposit has been estimated. ► Cause of interface asymmetry has been found out.