کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5363215 | 1388298 | 2008 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Dependence of N2 pressure on the crystal structure and surface quality of AlN thin films deposited via pulsed laser deposition technique at room temperature
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In this paper, dependence of N2 pressure on the crystal structure and surface quality of AlN thin films deposited via pulsed laser ablation of Al target in the environment of N2 at room temperature is reported. The films were analyzed with AFM, SEM, XRD and FTIR for crystal structure and surface morphology. At higher N2 pressure, the orientation of AlN is (1Â 0Â 1) whereas at lower pressure (0Â 0Â 2) orientation was observed. The dependence of PL spectra of pulsed laser deposited AlN thin films on to the crystal structure and deposition time is reported. The effect of N2 pressure on FTIR spectra of AlN thin film is also reported in the paper.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 255, Issue 5, Part 1, 30 December 2008, Pages 2057-2062
Journal: Applied Surface Science - Volume 255, Issue 5, Part 1, 30 December 2008, Pages 2057-2062
نویسندگان
Gaurav Shukla, Alika Khare,