کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5363232 | 1388298 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Analysis of ITO/Mg:GaN interfaces by synchrotron radiation hard X-ray photoemission spectroscopy and their electrical characteristics
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Analysis of ITO/Mg:GaN interfaces by synchrotron radiation hard X-ray photoemission spectroscopy and their electrical characteristics Analysis of ITO/Mg:GaN interfaces by synchrotron radiation hard X-ray photoemission spectroscopy and their electrical characteristics](/preview/png/5363232.png)
چکیده انگلیسی
Interfacial chemical states and Schottky barrier heights (SBHs) for indium tin oxide (ITO) electrodes on Mg:GaN films have been investigated by high-resolution hard X-ray photoemission spectroscopy (HX-PES), and have been correlated with electrical properties. HX-PES has revealed that the large downward band bending of 2.6Â eV was drastically reduced by ITO deposition and annealing, resulting in low SBH of 0.2Â eV which is well correlated with good ohmic contact. Improvements of electrical properties can be attributed to the combination of (1) the interfacial layer with large work function, (2) the ordered interfacial dipole layer and (3) activation by ITO catalytic effect.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 255, Issue 5, Part 1, 30 December 2008, Pages 2149-2152
Journal: Applied Surface Science - Volume 255, Issue 5, Part 1, 30 December 2008, Pages 2149-2152
نویسندگان
Y. Toyoshima, K. Horiba, M. Oshima, J. Ohta, H. Fujioka, H. Miki, S. Ueda, Y. Yamashita, H. Yoshikawa, K. Kobayashi,