کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5363233 | 1388298 | 2008 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
A systematic study of chemical vapor deposition growth of InN
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
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چکیده انگلیسی
In this paper, the chemical vapor deposition (CVD) growth of indium nitride (InN) was systematically investigated. With In and NH3 as the starting materials, and Au as the catalyst, the effect of the CVD growth parameters, such as the growth temperature, gas flow rates, catalyst type and catalyst thickness, In amount, and the distance between the substrates and In source, were all studied. All these parameters were found to have an influence on the morphology of InN nanostructures. It is found that the highest growth temperature is 550 °C. Larger gas flow rates with higher NH3 ratio favors the growth of InN nanorods. Au and Ag are the successful catalysts for InN nanorods. Thicker catalyst thickness results in InN nanorods with larger polyhedral ends. Both cubic and hexagonal InN are observed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 255, Issue 5, Part 1, 30 December 2008, Pages 2153-2158
Journal: Applied Surface Science - Volume 255, Issue 5, Part 1, 30 December 2008, Pages 2153-2158
نویسندگان
X.M. Cai, F. Ye, S.Y. Jing, D.P. Zhang, P. Fan, E.Q. Xie,