کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5363419 1388301 2007 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Poly-benzyl domains grown on porous silicon and their I-V rectification
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Poly-benzyl domains grown on porous silicon and their I-V rectification
چکیده انگلیسی
Microwave-irradiated polymerization of benzyl chloride and triphenyl chloromethane on hydride-terminated porous silicon (PS) was achieved through the use of Zn powder as a catalyst. Transmission infrared Fourier-transform spectroscopy (FTIR) and X-ray photoelectron spectroscopy (XPS) analyses confirmed the poly-benzyl membranes grafted on PS. Topographical images by AFM revealed crystal-like domains rather than homogenous monolayers on the surface. The current-voltage measurements in nano-scale by current sensing atomic force microscopy (CS-AFM) showed the rectification behavior of this polymer membrane. Finally, mechanism of a radical initiation on the surface and a following Friedel-Crafts alkylation was proposed for the covalent assembly of poly-benzyl domains.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 253, Issue 23, 30 September 2007, Pages 9130-9136
نویسندگان
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