کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5363541 | 1388303 | 2008 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Cluster SIMS using metal cluster complex ions
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موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Metal cluster complexes are chemically synthesized organometallic compounds, which have a wide range of chemical compositions with high molecular weight. Using a metal cluster complex ion source, sputtering characteristics of silicon bombarded with normally incident Ir4(CO)7+ ions were investigated. Experimental results showed that the sputtering yield at 10 keV was 36, which is higher than that with Ar+ ions by a factor of 24. In addition, secondary ion mass spectrometry (SIMS) of boron-delta-doped silicon samples and organic films of poly(methyl methacrylate) (PMMA) was performed. Compared with conventional O2+ ion beams, Ir4(CO)7+ ion beams improved depth resolution by a factor of 2.5 at the same irradiation conditions; the highest depth resolution of 0.9 nm was obtained at 5 keV, 45° with oxygen flooding of 1.3 Ã 10â4 Pa. Furthermore, it was confirmed that Ir4(CO)7+ ion beams significantly enhanced secondary ion intensity in high-mass region.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 255, Issue 4, 15 December 2008, Pages 916-921
Journal: Applied Surface Science - Volume 255, Issue 4, 15 December 2008, Pages 916-921
نویسندگان
Yukio Fujiwara, Kouji Kondou, Yoshikazu Teranishi, Kouji Watanabe, Hidehiko Nonaka, Naoaki Saito, Hiroshi Itoh, Toshiyuki Fujimoto, Akira Kurokawa, Shingo Ichimura, Mitsuhiro Tomita,