کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5363545 | 1388303 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Artifacts in the sputtering of inorganics by C60n+
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Artifacts in the sputtering of inorganics by C60n+ Artifacts in the sputtering of inorganics by C60n+](/preview/png/5363545.png)
چکیده انگلیسی
In the present study, the basic issues in C60n+ sputtering are studied using silicon, gold and platinum samples. Sputtering yields are measured for energies in the range of 5-30Â keV, by sputtering micrometre sized craters on the surface of flat clean samples and measuring their volumes using atomic force microscopy (AFM). Net deposition of carbon occurs for all three materials at 5Â keV, and is not specific to silicon which forms a carbide. The threshold energy for net sputtering is dependent on the sputtering yield and the stopping power of the substrate. Away from the threshold, the sputtering yields agree well with Sigmund and Claussen's thermal spike model after allowance for the sputtering of the deposited carbon atoms. AFM images show the formation of unusual surface topography around the transition region between sputtering and deposition. Analysis of the bottom of a crater using imaging SIMS shows a significant enhancement of carbon clusters as well as various silicon-carbon groups, indicating the importance of carbon deposition and implantation in a gradual mixed layer formed from sputtering. The thickness of this interface layer is shown to be approximately 5Â nm.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 255, Issue 4, 15 December 2008, Pages 934-937
Journal: Applied Surface Science - Volume 255, Issue 4, 15 December 2008, Pages 934-937
نویسندگان
J.L.S. Lee, M.P. Seah, I.S. Gilmore,