کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5363732 | 1388305 | 2010 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Characterization of Si-added aluminum oxide (AlSiO) films for power devices
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Characterization of Si-added aluminum oxide (AlSiO) films for power devices Characterization of Si-added aluminum oxide (AlSiO) films for power devices](/preview/png/5363732.png)
چکیده انگلیسی
Synthesis of Si-added aluminum oxide (AlSiO) films is attempted as an insulating film with both a wide bandgap and a high dielectric constant. Electrical characteristics of AlSiO films are investigated. Leakage current of the AlO film is suppressed by Si addition and is minimized with Si composition ratio of 12%. Capacitance versus voltage (C-V) measurements are carried out for Au/AlSiO/Si MIS structure. Both flat band shift and hysteresis of the C-V characteristics are suppressed by Si addition. A low leakage current is demonstrated for Au/AlSiO/n-SiC MIS structure.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 256, Issue 6, 1 January 2010, Pages 1803-1806
Journal: Applied Surface Science - Volume 256, Issue 6, 1 January 2010, Pages 1803-1806
نویسندگان
Naoyoshi Komatsu, Keiko Masumoto, Hidemitsu Aoki, Chiharu Kimura, Takashi Sugino,