Keywords: دستگاه قدرت; Power device; Failure analysis; Metallization microstructure aging; Scanning Electron Microscopy (SEM); Focused Ion Beam (FIB); Temperature cycles; Curvature experiment;
مقالات ISI دستگاه قدرت (ترجمه نشده)
مقالات زیر هنوز به فارسی ترجمه نشده اند.
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Keywords: دستگاه قدرت; Power device; Temperature distribution; Real-time simulation; Power cycling test;
Keywords: دستگاه قدرت; Reliability tool; Mission profiles; Stress emulator; Power device; Thermal cycling;
Keywords: دستگاه قدرت; Polymer; Power device; Degradation; PEDOT:PSS; Shrinkage; Charging-discharging;
Keywords: دستگاه قدرت; Single crystal diamond; Diamond wafer; Power device;
Keywords: دستگاه قدرت; Power device; Breakdown voltage; Specific on-resistance; SOI;
Recent advances in 4H-SiC epitaxy for high-voltage power devices
Keywords: دستگاه قدرت; 4H-SiC; Power device; Epitaxial growth; Dislocation; Stacking fault; Carrier lifetime;
Current status and perspectives of ultrahigh-voltage SiC power devices
Keywords: دستگاه قدرت; Silicon carbide; Power device; Bipolar device; Breakdown; Carrier lifetime;
Adhesion of electrodes on diamond (111) surface: A DFT study
Keywords: دستگاه قدرت; Electrodes on diamond device; Surface termination; Power device;
Failure mechanism analysis of off-state drain-to-source leakage current failure of a commercial 650Â V discrete GaN-on-Si HEMT power device by accelerated power cycling test
Keywords: دستگاه قدرت; Gallium nitride; GaN-on-Si; Leakage current; Power cycling; Power device; Reliability; Failure mechanism; Failure analysis;
The Investigation of a SOI-LDMOS Equipped with the Poly-PiN-diode Field Plate
Keywords: دستگاه قدرت; Poly-PiN-diode; uniform potential; SOI-LDMOS; power device; energy conversion;
Study on high breakdown voltage GaN-based vertical field effect transistor with interfacial charge engineering for power applications
Keywords: دستگاه قدرت; GaN HFETs; Vertical; Heterostructure; Breakdown voltage; Power device;
Design of high breakdown voltage vertical GaN p-n diodes with high-K/low-K compound dielectric structure for power electronics applications
Keywords: دستگاه قدرت; Gallium nitride; Diode; Breakdown voltage; High-K; Low-K; Vertical; Power device;
3.3Â kV 4H-SiC JBS diodes with single-zone JTE termination
Keywords: دستگاه قدرت; 4H-SiC; Power device; JBS; JTE;
New Al0.25Ga0.75N/GaN high electron mobility transistor with partial etched AlGaN layer
Keywords: دستگاه قدرت; HEMT; Electric field modulation effect; Power device
Analytical model of LDMOS with a double step buried oxide layer
Keywords: دستگاه قدرت; Silicon On Insulator; Surface electric field; Electric field modulation effect; Power device
Analytical model of LDMOS with a single step buried oxide layer
Keywords: دستگاه قدرت; Silicon on insulator; Surface electric field; Electric field modulation effect; Power device;
Breakdown behaviour of high-voltage GaN-HEMTs
Keywords: دستگاه قدرت; GaN; Power device; Breakdown;
Remote plasma atomic layer deposited Al2O3 4H SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing
Keywords: دستگاه قدرت; Plasma hydrogen passivation; SiC; Power device; ALD Al2O3;
Temperature mapping by μ-Raman spectroscopy over cross-section area of power diode in forward biased conditions
Keywords: دستگاه قدرت; Cross section; Power device; Raman scattering; Strain mapping; Thermal mapping; μ-Raman spectroscopy
High-voltage AlGaN/GaN Schottky barrier diodes on silicon using a post-process O2 treatment
Keywords: دستگاه قدرت; GaN; Schottky barrier diode; Post-process O2 treatment; Breakdown voltage; Power device
Overload robust IGBT design for SSCB application
Keywords: دستگاه قدرت; Robust; Power device; IGBT; SSCB;
Modeling of power devices with drift region integrated microchannel cooler
Keywords: دستگاه قدرت; Cooling; Microchannel; Vertical device; Power device; Simulation
High temperature application of diamond power device
Keywords: دستگاه قدرت; Diamond; Schottky barrier diode; High temperature operation; Power device
Influence of inserting AlN between AlSiON and 4H-SiC interface for the MIS structure
Keywords: دستگاه قدرت; AlN; Buffer layer; AlSiON; Wide bandgap; High temperature; Power device; MOSFET;
A 2-dimensional fully analytical model for design of high voltage junction barrier Schottky (JBS) diodes
Keywords: دستگاه قدرت; JBS; SiC; Analytical model; Schottky; Tunneling; Diode; Power device; MPS
Characterization of Si-added aluminum oxide (AlSiO) films for power devices
Keywords: دستگاه قدرت; Wide bandgap; Insulator; AlSiO; MIS; AlO; Power device;
An internally-matched GaN HEMTs device with 45.2 W at 8 GHz for X-band application
Keywords: دستگاه قدرت; AlGaN/AlN/GaN; HEMT; MOCVD; SiC substrate; Power device
1-mm gate periphery AlGaN/AlN/GaN HEMTs on SiC with output power of 9.39 W at 8 GHz
Keywords: دستگاه قدرت; 72.80.Ey; 81.05.Ea; 81.15.Gh; 85.30.TvAlGaN/GaN; HEMT; MOCVD; Power device; SiC substrates
Novel buffer engineering: A concept for fast switching and low loss operation of planar IGBT
Keywords: دستگاه قدرت; 85.30.De; 84.30.Jc; 85.30.Pq; 85.30.TvInsulated gate bipolar transistor; Power device; Novel buffer; Better trade-off
A novel high performance insulated gate bipolar transistor
Keywords: دستگاه قدرت; 85.30.De; 84.30.Jc; 85.30.Pq; 85.30.TvInsulator gate bipolar transistor; LDE-IGBT; Power device
Commercial SiC device processing: Status and requirements with respect to SiC based power devices
Keywords: دستگاه قدرت; Silicon carbide; Power device; Schottky diode; Ohmic contact; Production; Wafering
Effect of pore size and surface area of carbide derived carbons on specific capacitance
Keywords: دستگاه قدرت; Supercapacitor; Power device; Electrochemical capacitor; Carbide derived carbon
Analysis and characterization of the injection efficiency tuning IGBT
Keywords: دستگاه قدرت; 85.30.De; 84.30.Jc; 85.30.Pq; 85.30.TvInsulated gate bipolar transistor; Power device; Novel buffer; Better trade-off; IET-IGBT
Circuit models for quasi-3D spice simulation of turn-on transients in four-layer power bipolar devices
Keywords: دستگاه قدرت; 3D; 2D; Simulation; Power device; Thyristor; Four-layer; TOVP; Plasma spreading
Improved DC and RF performance of AlGaN/GaN HEMTs grown by MOCVD on sapphire substrates
Keywords: دستگاه قدرت; HEMT; GaN; MOCVD; Power device;
Influence of carbon nanotubes addition on carbon-carbon supercapacitor performances in organic electrolyte
Keywords: دستگاه قدرت; Supercapacitor; Activated carbon; Carbon nanotubes; Power device;