کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
748295 894750 2011 10 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
A 2-dimensional fully analytical model for design of high voltage junction barrier Schottky (JBS) diodes
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
A 2-dimensional fully analytical model for design of high voltage junction barrier Schottky (JBS) diodes
چکیده انگلیسی

A physics-based closed form analytical model for the reverse leakage current of a high voltage junction barrier Schottky (JBS) diode is developed and shown to agree with experimental results. Maximum electric field “seen” by the Schottky contact is calculated from first principles by a 2-dimensional method as a function of JBS diode design parameters and confirmed by numerical simulations. Considering thermionic emission under image force barrier lowering and quantum mechanical tunneling, electric field at the Schottky contact is then related to reverse current. In combination with previously reported forward current and resistance models, this gives a complete I–V relationship for the JBS diode. A layout of interdigitated stripes of P–N and Schottky contacts at the anode is compared theoretically with a honeycomb layout and the 2-D model is extended to the 3-D honeycomb structure. Although simulation and experimental results from 4H–Silicon Carbide (SiC) diodes are used to validate it, the model itself is applicable to all JBS diodes.


► We derive closed form I–V equations for high voltage JBS diodes.
► 2-dimensional analytical model is fitted with simulation and experimental data.
► We compare honeycomb layout of anode contact with rectangular stripes.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 63, Issue 1, September 2011, Pages 167–176
نویسندگان
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