کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
702444 | 1460806 | 2012 | 5 صفحه PDF | دانلود رایگان |
Diamond is a promising material for future high power devices due to high breakdown field, low dielectric constant and high carrier mobility, respectively. From one-dimensional device model, 90% reduction of the power loss is expected by using diamond Schottky barrier diode instead of SiC diode for high temperature power device applications. The high breakdown field of more than 3 MV/cm has been realized by utilizing high Schottky barrier height. The diodes show low leakage current and low on-resistance even at high temperature conditions.
► Diamond SBDs have been evaluated for high-temperature and high-power applications.
► Using diamond instead of SiC for SBDs, a 90% reduction in power loss is expected.
► A stability of Ru SBDs at 400 oC has been confirmed after 1500 h.
► High SBH realizes low leakage current at high field even at high temperature.
Journal: Diamond and Related Materials - Volume 24, April 2012, Pages 201–205