Synthesis and characterization of multi-element oxynitride semiconductor film prepared by reactive sputtering deposition

This study concerns the use of reactive magnetron sputtering to prepare (TiVCrZrTa)-based oxide and oxynitride films. (TiVCrZrTa)1−xOx and (TiVCrZrTa)1−x−yNyOx films were prepared, and were found to be amorphous and free of multi-phase structure. Cations and anions in such structures were arranged in a random homogeneous dispersion. The introduction of nitrogen atoms into (TiVCrZrTa)1−xOx yields (TiVCrZrTa)1−x−yNyOx, which has a reduced oxidation state and thus, an increased number of the valence electrons. The (TiVCrZrTa)1−x−yNyOx film is an n-type semiconductor, with an indirect band gap of 1.95 eV, and a carrier concentration (N) and conductivity (σ) of 1.01 × 1019 cm−3 and 2.75 × 10−2 (Ω cm)−1, respectively.

► The structural and semiconductor properties of multi-element oxide and oxynitride films were examined. ► The results revealed that (TiVCrZrTa)1−xOx and (TiVCrZrTa)1−x−yNyOx are amorphous. ► In the three-dimensional structure, anions act as cores surrounded by cations in a random and homogeneous dispersion. ► The (TiVCrZrTa)1−x−yNyOx film is an n-type semiconductor with a conductivity of 2.75 × 10−2 (Ω cm)−1. ► The indirect band gap of the (TiVCrZrTa)1−x−yNyOx film was 1.95 eV.