کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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5364137 | 1503700 | 2012 | 4 صفحه PDF | دانلود رایگان |
This study concerns the use of reactive magnetron sputtering to prepare (TiVCrZrTa)-based oxide and oxynitride films. (TiVCrZrTa)1âxOx and (TiVCrZrTa)1âxâyNyOx films were prepared, and were found to be amorphous and free of multi-phase structure. Cations and anions in such structures were arranged in a random homogeneous dispersion. The introduction of nitrogen atoms into (TiVCrZrTa)1âxOx yields (TiVCrZrTa)1âxâyNyOx, which has a reduced oxidation state and thus, an increased number of the valence electrons. The (TiVCrZrTa)1âxâyNyOx film is an n-type semiconductor, with an indirect band gap of 1.95 eV, and a carrier concentration (N) and conductivity (Ï) of 1.01 Ã 1019 cmâ3 and 2.75 Ã 10â2 (Ω cm)â1, respectively.
⺠The structural and semiconductor properties of multi-element oxide and oxynitride films were examined. ⺠The results revealed that (TiVCrZrTa)1âxOx and (TiVCrZrTa)1âxâyNyOx are amorphous. ⺠In the three-dimensional structure, anions act as cores surrounded by cations in a random and homogeneous dispersion. ⺠The (TiVCrZrTa)1âxâyNyOx film is an n-type semiconductor with a conductivity of 2.75 Ã 10â2 (Ω cm)â1. ⺠The indirect band gap of the (TiVCrZrTa)1âxâyNyOx film was 1.95 eV.
Journal: Applied Surface Science - Volume 263, 15 December 2012, Pages 58-61