کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5364306 1388314 2007 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Slow positron beam study of nitrogen implanted CZ-Si subjected to rapid thermal processing
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Slow positron beam study of nitrogen implanted CZ-Si subjected to rapid thermal processing
چکیده انگلیسی

In this experiment, nitrogen ions were implanted into CZ-silicon wafer at 100 keV at room temperature with the fluence of 5 × 1015 N2+/cm2, followed by rapid thermal processing (RTP) at different temperatures. The single detector Doppler broadening and coincidence Doppler broadening measurements on slow positron beam were carried out to characterize the defects in the as-implanted silicon and RTP-treated samples. It is found that both nitrogen-vacancy complexes (N-Vsi) and oxygen-vacancy complexes (O-Vsi) produced by nitrogen implantation diffuse back to the sample surface upon annealing. But the N-Vsi and the O-Vsi complete with each other and give a summed effect on positron annihilation characteristics. It is shown that the N-Vsi win out the O-Vsi in as-implanted sample and by RTP at 650 °C, 750 °C, which make the S-parameter increase; O-Vsi plays a dominant role after annealing above 850 °C, which makes the S parameter decrease.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 253, Issue 16, 15 June 2007, Pages 6868-6871
نویسندگان
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