کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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5364449 | 1388316 | 2009 | 6 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Characterization of gallium-doped CdS thin films grown by chemical bath deposition Characterization of gallium-doped CdS thin films grown by chemical bath deposition](/preview/png/5364449.png)
Ga-doped CdS thin films, with different [Ga]/[Cd] ratios, were grown using chemical bath deposition. The effect of Ga-doping on optical properties and bandgap of CdS films is investigated. Resistivity, carrier density, and mobility of doped films were acquired using Hall effect measurements. Crystal structure as well as crystal quality and phase transition were determined using X-ray diffraction (XRD) and Micro-Raman spectroscopy. Film morphology was studied using scanning electron microscopy, while film chemistry and binding states were studied using X-ray photoelectron spectroscopy (XPS). A minimum bandgap of 2.26Â eV was obtained at [Ga]/[Cd] ratio of 1.7Â ÃÂ 10â2. XRD studies showed Ga3+ ions entering the lattice substitutionally at low concentration, and interstitially at high concentration. Phase transition, due to annealing, as well as induced lattice defects, due to doping, were detected by Micro-Raman spectroscopy. The highest carrier density and lowest resistivity were obtained at [Ga]/[Cd] ratio of 3.4Â ÃÂ 10â2. XPS measurements detect an increase in sulfur deficiency in doped films.
Journal: Applied Surface Science - Volume 255, Issue 7, 15 January 2009, Pages 4129-4134