کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5364508 | 1503702 | 2012 | 7 صفحه PDF | دانلود رایگان |

Pulsed laser irradiation of 3 μm thick silicone films at 157 nm below and above the ablation threshold of about 100 mJ/cm2 has been investigated. Significantly above the ablation threshold, clean material removal is observed. Irradiation below threshold leads to surface swelling and a modification of the chemical composition as revealed by Raman spectroscopy. After 10,000 pulses at 30 mJ/cm2 a nearly carbon free silica like material is obtained. The 157 nm-ablation threshold of this modified material amounts to 800 mJ/cm2, which is similar to that of fused silica. At 60 mJ/cm2, the CH3-content is similarly reduced, but a graphitization is observed after about 10 000 pulses. In both cases the modified material exhibits broadband visible luminescence. Combinations of modification and ablation are used to fabricate patterned silica films.
⺠157 nm F2-laser irradiation of silicone films is investigated. ⺠Multipulse-irradiation at 30 mJ/cm2 leads to carbon free silica like material. ⺠Irradiation above 100 mJ/cm2 leads to clean ablation of silicone. ⺠Patterned silica films are made by combined modification and ablation of silicone.
Journal: Applied Surface Science - Volume 261, 15 November 2012, Pages 68-74