کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5364645 1388318 2008 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Structural, optical and electrical characterization of highly conducting Mo-doped In2O3 thin films
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Structural, optical and electrical characterization of highly conducting Mo-doped In2O3 thin films
چکیده انگلیسی

Highly conducting and transparent thin films of molybdenum-doped indium oxide were deposited on quartz by pulsed laser deposition. The effect of growth temperature and oxygen partial pressure on the structural, optical and electrical properties was studied. We find that the film transparency depends on the growth temperature. The average transmittance of the films grown at different temperatures is in range of 48-87%. The X-ray diffraction results show that the films grown at low temperature are amorphous while the films grown at higher temperature are crystalline. Electrical properties are found to be sensitive to both the growth temperature and oxygen pressure. Resistivity of the films decreases from 1.3 × 10−3 Ω cm to 8.9 × 10−5 Ω cm while mobility increases from 9 cm2/V s to 138 cm2/V s as the growth temperature increases from room temperature to 700 °C. However, with increase in oxygen pressure, resistivity increases but the mobility decreases after attaining a maximum. The temperature-dependent resistivity measurements show transition form semiconductor to metallic behavior. The film grown at 500 °C under an oxygen pressure of 1.0 × 10−3 mbar is found to exhibit high mobility (250 cm2/V s), low resistivity (6.7 × 10−5 Ω cm), and relatively high transmittance (∼90%).

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 254, Issue 13, 30 April 2008, Pages 4018-4023
نویسندگان
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