دانلود مقالات ISI درباره 61.16C + ترجمه فارسی

Wide band gap Cd0.83Mg0.15Al0.02O thin films by pulsed laser deposition

Keywords: 72.20; 78.66; 73.50J; 61.16C; Cadmium oxide; Aluminum oxide; Magnesium oxide; Pulsed laser deposition; Band gap; Hall effect; Mobility;

دانلود رایگان متن کامل مقاله ISI 4 صفحه سال انتشار : 2009 سفارش ترجمه

Effect of substrate temperature on properties of multilayer thin film based on ZnO and Mo-doped indium oxide

Keywords: 72.20; 78.66; 73.50J; 61.16C; Zinc oxide; Indium oxide; Pulsed laser deposition; Transparent electrode; Hall effect; Multilayer;

دانلود رایگان متن کامل مقاله ISI 4 صفحه سال انتشار : 2009 سفارش ترجمه

Thickness dependence of optoelectrical properties of tungsten-doped indium oxide films

Keywords: 72.20; 78.66; 73.50J; 61.16C; Semiconductor; Electrical properties; Thin films; Indium oxide; Optical materials and properties;

دانلود رایگان متن کامل مقاله ISI 5 صفحه سال انتشار : 2009 سفارش ترجمه

Influence of oxygen partial pressure on optoelectrical properties of aluminum-doped CdO thin films

Keywords: 72.20; 78.66; 73.50J; 61.16C; Cadmium oxide; Pulsed laser deposition; Transparent electrode; Hall effect; Mobility;

دانلود رایگان متن کامل مقاله ISI 6 صفحه سال انتشار : 2008 سفارش ترجمه

Structural, optical and electrical characterization of highly conducting Mo-doped In2O3 thin films

Keywords: 72.20; 78.66; 73.50J; 61.16C; Semiconductor; Electrical properties; Thin films; Indium oxide; Molybdenum; Optical materials and properties;

دانلود رایگان متن کامل مقاله ISI 6 صفحه سال انتشار : 2008 سفارش ترجمه

Opto-electrical properties of Ti-doped In2O3 thin films grown by pulsed laser deposition

Keywords: 72.20; 78.66; 73.50J; 61.16C; Semiconductor; Electrical properties; Thin films; Indium oxide; Titanium; Optical materials and properties;

دانلود رایگان متن کامل مقاله ISI 4 صفحه سال انتشار : 2007 سفارش ترجمه

Influence of the substrate temperature on the structure of Ge containing thin films produced by ArF laser induced chemical vapour deposition

Keywords: 42.70; 81.15; 61.43 D; 33.80.G; 61.16C; 61.10; 33.60; LCVD; Ge containing films; Thin films; FTIR; XRD;

دانلود رایگان متن کامل مقاله ISI 5 صفحه سال انتشار : 2005 سفارش ترجمه

Compositional, structural and optical properties of Si-rich a-SiC:H thin films deposited by ArF-LCVD

Keywords: 42.70.H; 33.80.G; 81.15; 61.43 D; 78.30.E; 78.20; 61.16C; 33.60; LCVD; a-SiC:H; Bandgap tailoring; Thin films; FTIR; XPS;

دانلود رایگان متن کامل مقاله ISI 5 صفحه سال انتشار : 2005 سفارش ترجمه

Atomic force microscopy study on crystal growth of Cu2+-doped L-arginine phosphate monohydrate crystals

Keywords: 42.70M; 61.72Q; 61.16C; A1. Atomic force microscopy; A1. Inclusions; A1. Sub-step; B1. Cu2+-doped LAP crystals;

دانلود رایگان متن کامل مقاله ISI 5 صفحه سال انتشار : 2005 سفارش ترجمه

Thickness effects on microstructural evolution of low-pressure-chemical-vapor-deposited amorphous silicon films during excimer-laser-induced crystallization

Keywords: 61.16B; 61.16C; 61.16D; 61.80B; Silicon; Laser irradiation; Transmission electron microscopy;

دانلود رایگان متن کامل مقاله ISI 7 صفحه سال انتشار : 2005 سفارش ترجمه

Transformation of microcrystalline silicon films by excimer-laser-induced crystallization

Keywords: 61.16B; 61.16C; 61.43D; 61.80B; Silicon; Laser irradiation; Atomic force microscopy; Transmission electron microscopy;

دانلود رایگان متن کامل مقاله ISI 7 صفحه سال انتشار : 2005 سفارش ترجمه

Characterization of microroughness parameters in gadolinium oxide thin films: A study based on extended power spectral density analyses

Keywords: 42.79W; 68.35.C; 61.16C; 81.15E; Reactive electron beam evaporation; Surface microroughness; Power spectral density;

دانلود رایگان متن کامل مقاله ISI 12 صفحه سال انتشار : 2005 سفارش ترجمه