کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5362390 | 1388284 | 2008 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Influence of oxygen partial pressure on optoelectrical properties of aluminum-doped CdO thin films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Influence of oxygen partial pressure on optoelectrical properties of aluminum-doped CdO thin films Influence of oxygen partial pressure on optoelectrical properties of aluminum-doped CdO thin films](/preview/png/5362390.png)
چکیده انگلیسی
Highly conducting and transparent aluminum-doped CdO thin films were deposited on quartz by ablating the sintered target of CdO containing 2 wt% of aluminum with a KrF excimer laser (λ = 248 nm and pulsed duration of 20 ns). The effect of oxygen partial pressure on structural, electrical, and optical properties was studied. It is observed that the (2 0 0) plane is highly preferred for the films grown under high oxygen pressure. The conductivity, carrier concentration and mobility of the films decrease with increase in the oxygen pressure after attaining maximum. Low resistivity (2.27 Ã 10â5 Ω cm), and high mobility (79 cm2 Vâ1 sâ1) is observed for the film grown under oxygen pressure of 1.0 Ã 10â3 mbar. The optical band gap is found varying between 2.68 and 2.90 eV for various oxygen pressure.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 254, Issue 18, 15 July 2008, Pages 5868-5873
Journal: Applied Surface Science - Volume 254, Issue 18, 15 July 2008, Pages 5868-5873
نویسندگان
R.K. Gupta, K. Ghosh, R. Patel, S.R. Mishra, P.K. Kahol,