کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5365811 | 1388338 | 2007 | 4 صفحه PDF | دانلود رایگان |
By ablating titanium containing In2O3 target with a KrF excimer laser, highly conducting and transparent films on quartz were obtained to investigate the effects of growth temperature and oxygen pressure on the structural, optical and electrical properties of these films. We find that the transparency of the films depends more on the growth temperature and less on the oxygen pressure. Electrical properties, however, are found to be sensitive to both the growth temperature and oxygen pressure. We report in this paper that a growth temperature of 500 °C and an oxygen pressure of 7.5 Ã 10â7 bar lead to titanium-doped indium oxide films which have high mobility (up to 199 cm2 Vâ1 sâ1), low resistivity (9.8 Ã 10â5 Ω cm), and relatively high transmittance (â¼88%).
Journal: Applied Surface Science - Volume 253, Issue 24, 15 October 2007, Pages 9422-9425