کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5360165 | 1388257 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Wide band gap Cd0.83Mg0.15Al0.02O thin films by pulsed laser deposition
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Wide band gap Cd0.83Mg0.15Al0.02O thin films by pulsed laser deposition Wide band gap Cd0.83Mg0.15Al0.02O thin films by pulsed laser deposition](/preview/png/5360165.png)
چکیده انگلیسی
Magnesium and aluminum doped CdO thin films were deposited on quartz substrate using pulsed laser deposition technique. Magnesium is used to widen the band gap and aluminum is used to increase carrier concentration of CdO films. The effect of growth temperature on structural, optical, and electrical properties was studied. These films are crystalline in nature and their preferred orientation depends on growth temperature. These films are highly transparent (â¼86%) in visible region. The band gap of the films varies from 3.1Â eV to 3.4Â eV. The electrical conductivity and carrier concentration were found to decrease with increase in growth temperature.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 255, Issue 8, 1 February 2009, Pages 4466-4469
Journal: Applied Surface Science - Volume 255, Issue 8, 1 February 2009, Pages 4466-4469
نویسندگان
R.K. Gupta, K. Ghosh, R. Patel, P.K. Kahol,