کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5364665 1388318 2008 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
XPS study of the formation of ultrathin GaN film on GaAs(1 0 0)
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
XPS study of the formation of ultrathin GaN film on GaAs(1 0 0)
چکیده انگلیسی

The nitridation of GaAs(1 0 0) surfaces has been studied using XPS spectroscopy, one of the best surface sensitive techniques. A glow discharge cell was used to produce a continuous plasma with a majority of N atomic species. We used the Ga3d and As3d core levels to monitor the chemical state of the surface and the coverage of the species. A theoretical model based on stacked layers allows to determine the optimal temperature of nitridation. Moreover, this model permits the determination of the thickness of the GaN layer. Varying time of nitridation from 10 min to 1 h, it is possible to obtain GaN layers with a thickness between 0.5 nm and 3 nm.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 254, Issue 13, 30 April 2008, Pages 4150-4153
نویسندگان
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