کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5364790 | 1388320 | 2010 | 6 صفحه PDF | دانلود رایگان |
After chemical mechanical planarization (CMP), the reason which caused the formation of Cu-oxide defects at the interface between Cu deposit and TaN barrier layer has been studied. The experimental results of atomic force microscopy, secondary ion mass spectroscopy, X-ray diffraction demonstrated that the agglomeration phenomenon was found on Cu seed in the thickness of only 10Â nm, thus resulting in the electrodeposited Cu film with more abundant C impurities at Cu/TaN interface and lower (1Â 1Â 1)/(2Â 0Â 0) ratio compared to the thick one (30Â nm). Therefore it caused the Cu deposit with poor corrosion resistance and then the Cu-oxide defects were easily formed after CMP. As a result, the correlation between Cu-oxide defects at the Cu/TaN interface and the agglomeration on Cu seed layer was proposed herein.
Journal: Applied Surface Science - Volume 257, Issue 2, 1 November 2010, Pages 547-552