کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5364823 | 1388321 | 2009 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Atom beam sputtered Mo2C films as a diffusion barrier for copper metallization
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The saddle field fast atom beam sputtered (ABS) 50 nm thick molybdenum carbide (Mo2C) films as a diffusion barrier for copper metallization were investigated. To study the diffusion barrier properties of Mo2C films, the as-deposited and annealed samples were characterized using four probes, X-ray diffraction, field enhanced scanning electron microscopy, energy dispersive X-ray analysis, atomic force microscopy and Rutherford back scattering techniques. The amorphous structure of the barrier films along with presence of carbon atoms at the molybdenum carbide-silicon interface is understood to reduce effective grain boundaries and responsible for increased thermal stability of Cu/Mo2C/Si structure. The lowest resistivity of the as-deposited molybdenum carbide barrier films was â¼29 μΩ cm. The low carbon containing molybdenum carbide was found thermally stable up to 700 °C, therefore can potentially be used as a diffusion barrier for copper metallization.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 255, Issue 6, 1 January 2009, Pages 3518-3522
Journal: Applied Surface Science - Volume 255, Issue 6, 1 January 2009, Pages 3518-3522
نویسندگان
C.C. Tripathi, Mukesh Kumar, Dinesh Kumar,