Application of deposited by ALD HfO2 and Al2O3 layers in double-gate dielectric stacks for non-volatile semiconductor memory (NVSM) devices

► Feasibility of application of double-gate dielectric stacks with ALD layers in NVSM was investigated. ► Significant improvement in retention at elevated temperatures was demonstrated. ► Superior memory window (extrapolated at 10 years) of flat-band voltage (Ufb) values were obtained. ► Analysis of conduction mechanisms under negative voltage revealed F-N tunneling. ► Extracted values of barrier height (ΦB) linearly decrease with increasing temperature.