کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5364959 | 1388323 | 2008 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Optical characterization of PLD grown nitrogen-doped TiO2 thin films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
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چکیده انگلیسی
Nitrogen-doped TiO2 thin films were prepared by pulsed laser deposition (PLD) by ablating metallic Ti target with pulses of 248Â nm wavelength in reactive atmospheres of O2/N2 gas mixtures. The layers were characterized by UV-VIS spectrophotometry and variable angle spectroscopic ellipsometry with complementary profilometry for measuring the thickness of the films. Band gap and extinction coefficient values are presented for films deposited at different substrate temperatures and for varied N2 content of the gas mixture. The shown tendencies are correlated to nitrogen incorporation into the TiO2-xNx layers. It is shown that layers of significantly increased visible extinction coefficient with band gap energy as low as 2.89Â eV can be obtained. A method is also presented how the spectroscopic ellipsometric data should be evaluated in order to result reliable band gap values.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 254, Issue 11, 30 March 2008, Pages 3484-3488
Journal: Applied Surface Science - Volume 254, Issue 11, 30 March 2008, Pages 3484-3488
نویسندگان
B. Farkas, J. Budai, I. Kabalci, P. Heszler, Zs. Geretovszky,