Deposition Ga-doped ZnO films on PEN substrate at room temperature for thin film silicon solar cells

► The stress of ZnO:Ga films prepared on PEN was smaller than that of samples on glass. ► The transmittance of sample on PEN was larger than that of samples on glass. ► The best electrical property of ZnO:Ga was obtained with DBSP at 14 mm. ► The efficiency of flexible a-Si:H solar cells prepared at 150 °C was 5.91%.