کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5365305 | 1388328 | 2007 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Microstructure characterization of porous silicon as studied by positron annihilation measurements at low temperatures and high vacuum
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Microstructure characterization of porous silicon as studied by positron annihilation measurements at low temperatures and high vacuum Microstructure characterization of porous silicon as studied by positron annihilation measurements at low temperatures and high vacuum](/preview/png/5365305.png)
چکیده انگلیسی
Atomic scale properties of thin porous silicon (PSi) layers, characterized by the formation of positronium, are investigated using positron annihilation lifetime spectroscopy in the temperature range 20-300 K under 10â7 Torr vacuum. The longest orthopositronium as well as the shortest parapositronium components are found to have quite low intensities in the thin layer at room temperature. It is also found that at temperatures â¤240 K, these two components do not show up in the spectrum. The reason for this absence of the longest lifetime component is suggested.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 253, Issue 11, 30 March 2007, Pages 5129-5132
Journal: Applied Surface Science - Volume 253, Issue 11, 30 March 2007, Pages 5129-5132
نویسندگان
Pallab Banerji,