کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5365341 | 1388329 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Synthesis and characterization of β-Ga2O3 nanorods
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
A novel method was applied to prepare β-Ga2O3 nanorods. In this method, β-Ga2O3 nanorods have been successfully synthesized on Si(1 1 1) substrates through annealing sputtered Ga2O3/Mo films under flowing ammonia at 950 °C in a quartz tube. The as-synthesized nanorods are characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM) and Fourier transform infrared spectroscopy (FTIR). The results show that the nanorod is single-crystalline Ga2O3 with monoclinic structure. The β-Ga2O3 nanorods are straight and smooth with diameters in the range of 200-300 nm and lengths typically up to several micrometers. The growth process of the β-Ga2O3 nanorods is probably dominated by conventional vapor-solid (VS) mechanism.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 254, Issue 10, 15 March 2008, Pages 3057-3060
Journal: Applied Surface Science - Volume 254, Issue 10, 15 March 2008, Pages 3057-3060
نویسندگان
Huizhao Zhuang, Shiying Zhang, Xiaokai Zhang, Chengshan Xue, Baoli Li, Dexiao Wang, Jiabing Shen,