کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5365358 | 1388329 | 2008 | 5 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Effects of interface on the dielectric properties of Ba0.6Sr0.4TiO3 thin film capacitors Effects of interface on the dielectric properties of Ba0.6Sr0.4TiO3 thin film capacitors](/preview/png/5365358.png)
Ba0.6Sr0.4TiO3 thin films were deposited on Pt/SiO2/Si substrate by radio frequency magnetron sputtering. High-resolution transmission electron microscopy (HRTEM) observation shows that there is a transition layer at BST/Pt interface, and the layer is about 7-8 nm thickness. It is found that the transition layer was diminished to about 2-3 nm thickness by reducing the initial RF sputtering power. X-ray photoelectron spectroscopy (XPS) depth profiles show that high Ti atomic concentration results in a thick interfacial transition layer. Moreover, the symmetry ν of Ér-V curve of BST thin film is enhanced from 52.37 to 95.98%. Meanwhile, the tunability, difference of negative and positive remanent polarization (Pr), and that of coercive field (EC) are remarkably improved.
Journal: Applied Surface Science - Volume 254, Issue 10, 15 March 2008, Pages 3175-3179